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 Transistor
2SD973, 2SD973A
Silicon NPN epitaxial planer type
For low-frequency power amplification
Unit: mm
6.90.1
0.4
2.50.1 1.0
1.0 2.40.2 2.00.2 3.50.1
s Features
q q
1.5
1.00.1
Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. (Ta=25C)
Ratings 30 60 25 50 5 1.5 1 1 150 -55 ~ +150 1cm2 Unit V
1.5 R0.9 R0.9
R
0.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD973 2SD973A 2SD973 VCEO VEBO ICP IC PC* Tj Tstg VCBO Symbol
0.85
0.550.1
1.250.05
0.450.05
3
2
1
emitter voltage 2SD973A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
V
2.5 2.5
V A A W C C
1:Base 2:Collector 3:Emitter EIAJ:SC-71 M Type Mold Package
Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion
or more, and the board
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SD973 2SD973A 2SD973 2SD973A
(Ta=25C)
Symbol ICBO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob
*1
Conditions VCB = 20V, IE = 0 IC = 10A, IE = 0 IC = 2mA, IB = 0 IE = 10A, IC = 0 VCE = 10V, IC = 500mA*2 VCE = 5V, IC = 1A*2 IC = 500mA, IB = 50mA*2 IC = 500mA, IB = 50mA*2 VCB = 10V, IE = -50mA, f = 200MHz VCB = 10V, IE = 0. f = 1MHz
min
typ
max 0.1
30 60 25 50 5 85 50 160 100 0.2 0.85 200 11
*2
4.10.2
4.50.1
7
Unit A V
V V 340
Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance
*1h FE1
0.4 1.2
V V MHz
20
pF
Pulse measurement
Rank classification
Q 85 ~ 170 R 120 ~ 240 S 170 ~ 340
Rank hFE1
1
Transistor
PC -- Ta
1.4
2SD973, 2SD973A
IC -- VCE
1.50 Ta=25C 1.25 1.0 1.2 VCE=10V Ta=25C
IC -- I B
Collector power dissipation PC (W)
1.2
Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion.
Collector current IC (A)
1.0
1.00
8mA 7mA 6mA 5mA 4mA
Collector current IC (A)
IB=10mA 9mA
0.8
0.8
0.75
0.6
0.6
0.50
3mA 2mA
0.4
0.4
0.2
0.25
1mA
0.2
0 0 20 40 60 80 100 120 140 160
0 0 2 4 6 8 10
0 0 2 4 6 8 10 12
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Base current IB (mA)
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
10 3 1 0.3 0.1 0.03 0.01 0.003 0.001 0.01 0.03 Ta=75C 25C -25C
VBE(sat) -- IC
Base to emitter saturation voltage VBE(sat) (V)
IC/IB=10 100 30 10 3 25C 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=-25C 75C IC/IB=10 600
hFE -- IC
VCE=10
Forward current transfer ratio hFE
500
400
300 Ta=75C 200 25C 100 -25C
0.1
0.3
1
3
10
0.1
0.3
1
3
10
0 0.01 0.03
0.1
0.3
1
3
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
fT -- IE
200
Cob -- VCB
50 120
VCER -- RBE
Collector to emitter voltage VCER (V)
IE=0 f=1MHz Ta=25C IC=10mA Ta=25C 100
160
Collector output capacitance Cob (pF)
VCB=10V Ta=25C
Transition frequency fT (MHz)
40
80
120
30
60 2SD973A 40 2SD973 20
80
20
40
10
0 -1
0 -3 -10 -30 -100 1 3 10 30 100
0 0.1
0.3
1
3
10
30
100
Emitter current IE (mA)
Collector to base voltage VCB (V)
Base to emitter resistance RBE (k)
2
Transistor
ICEO -- Ta
104 VCE=10V 10 3 ICP 103
2SD973, 2SD973A
Area of safe operation (ASO)
Single pulse Ta=25C
Collector current IC (A)
1 0.3 0.1 0.03
IC t=1s
t=10ms
ICEO (Ta) ICEO (Ta=25C)
102
0.003 1 0 20 40 60 80 100 120 140 160 0.001 0.1
0.3
1
3
10
2SD973
10
0.01
30
2SD973A
100
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
3


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